511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振

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511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振

频率：100MHZ

尺寸：5.00mmx3.20mm

511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振，尺寸为5.00mmx3.20mm，频率100MHZ，电压为2.5V，频率稳定性20ppm.输出为LVDS，Silicon Crystal，Silicon有源振荡器，差分晶振LVDS，低功耗振荡器，有源贴片晶振，XO时钟振荡器，SMD振荡器，低电压晶振，低相噪振荡器，低相位差分晶振，低抖动差分晶振，Si510/511 XO采用了Skyworks Solutions公司先进的DSPLL技术提供从100千赫到250兆赫的任何频率。不像传统的XO其中每个输出频率需要不同的晶体，Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器在这个范围内产生任何频率。

这解决方案提供卓越的电源噪声抑制，简化低抖动时钟在嘈杂的环境中产生。晶体ESR和DLD是独立的生产测试，以保证性能和提高可靠性。Si510/511差分晶体振荡器可在工厂配置，适用于各种用户规格;包括频率、电源电压、输出格式、输出使能极性、和稳定性。特定的配置是在出厂时编程的运输，消除了漫长的交货期和非经常性的工程费用与自定义频率振荡器相关联。511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振.

订购热线：86-0755-27838351

511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振 参数表

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	V DD	3.3 V option	2.97	3.3	3.63	V
		2.5 V option	2.25	2.5	2.75	V
		1.8 V option	1.71	1.8	1.89	V
Supply Current	IDD	CMOS, 100 MHz, single-ended	—	21	26	mA
		LVDS (output enabled)	—	19	23	mA
		LVPECL (output enabled)	—	39	43	mA
		HCSL (output enabled)	—	41	44	mA
		Tristate (output disabled)	—	—	18	mA
OE "1" Setting	VIH	See Note	0.80 x V DD	—	—	V
OE "0" Setting	VIL	See Note	—	—	0.20 x V DD	V
OE Internal Pull-Up/Pull- Down Resistor*	RI		—	45	—	kΩ
Operating Temperature	TA		–40	—	85	oC

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	V DD	3.3 V option	2.97	3.3	3.63	V
		2.5 V option	2.25	2.5	2.75	V
		1.8 V option	1.71	1.8	1.89	V
Supply Current	IDD	CMOS, 100 MHz, single-ended	—	21	26	mA
		LVDS (output enabled)	—	19	23	mA
		LVPECL (output enabled)	—	39	43	mA
		HCSL (output enabled)	—	41	44	mA
		Tristate (output disabled)	—	—	18	mA
OE "1" Setting	VIH	See Note	0.80 x V DD	—	—	V
OE "0" Setting	VIL	See Note	—	—	0.20 x V DD	V
OE Internal Pull-Up/Pull- Down Resistor*	RI		—	45	—	kΩ
Operating Temperature	TA		–40	—	85	oC

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
CMOS Output Logic High	V OH		0.85 x V DD	—	—	V
CMOS Output Logic Low	VOL		—	—	0.15 x V DD	V
CMOS Output Logic High Drive	I OH	3.3 V	–8	—	—	mA
		2.5 V	–6	—	—	mA
		1.8 V	–4	—	—	mA
CMOS Output Logic Low Drive	I OL	3.3 V	8	—	—	mA
		2.5 V	6	—	—	mA
		1.8 V	4	—	—	mA
CMOS Output Rise/Fall Time (20 to 80% V DD)	TR/T F	0.1 to 212.5 MHz, CL = 15 pF	0.45	0.8	1.2	ns
		0.1 to 212.5 MHz, CL = no load	0.3	0.6	0.9	ns
LVPECL Output Rise/Fall Time (20 to 80% VDD)	TR/T F		100	—	565	ps
HCSL Output Rise/Fall Time (20 to 80% VDD)	TR/T F		100	—	470	ps
LVDS Output Rise/Fall Time (20 to 80% VDD)	TR/T F		350	—	800	ps
LVPECL Output Common Mode	VOC	50 Ω to V DD – 2 V, single-ended	—	V DD – 1.4 V	—	V
LVPECL Output Swing	VO	50 Ω to V DD – 2 V, single-ended	0.55	0.8	0.90	VPPSE
LVDS Output Common Mode	VOC	100 Ω line-line V DD= 3.3/2.5 V	1.13	1.23	1.33	V
		100 Ω line-line, V DD= 1.8 V	0.83	0.92	1.00	V
LVDS Output Swing	VO	Single-ended, 100 Ω differential termination	0.25	0.35	0.45	VPPSE
HCSL Output Common Mode	VOC	50 Ω to ground	0.35	0.38	0.42	V
HCSL Output Swing	VO	Single-ended	0.58	0.73	0.85	VPPSE
Duty Cycle	DC	All formats	48	50	52	%

511FCA100M000BAG-Silicon差分振荡器-6G交换机晶振-Si511有源晶振 尺寸图

OscillatorCrystal产品特性：

支持来自的任何频率100kHz至250MHz

低抖动操作

完全稳定包括10年老化

全面的生产测试

覆盖范围包括晶体ESR和DLD片内LDO电源调节器

电源噪声滤波 3.3、2.5或1.8V工作电压差异(LVPECL，LVDS， HCSL)或CMOS输出选项

可选集成1:2CMOS扇出缓冲器

OE上的不良抑制和通电

行业标准5x7、3.2x5、和2.5x3.2毫米封装

无铅，符合RoHS标准

–40至85摄氏度操作

更多相关Silicon晶振型号

Manufacturer Part Number原厂代码	Manufacturer品牌	Series型号	Frequency 频率	Voltage - Supply电压	Frequency Stability频率稳定度
511BBA148M500AAG	Silicon Labs	Si511	148.5MHz	3.3V	±25ppm
511FBA200M000BAG	Silicon Labs	Si511	200MHz	2.5V	±25ppm
510BBA200M000BAG	Silicon Labs	Si510	200MHz	3.3V	±25ppm
511FBA200M000AAG	Silicon Labs	Si511	200MHz	2.5V	±25ppm
511ABA25M0000BAG	Silicon Labs	Si511	25MHz	3.3V	±25ppm
511FCA100M000BAG	Silicon Labs	Si511	100MHz	2.5V	±20ppm
511BCA100M000BAG	Silicon Labs	Si511	100MHz	3.3V	±20ppm
530BA125M000DG	Silicon Labs	Si530	125MHz	3.3V	±50ppm
531FB125M000DG	Silicon Labs	Si531	125MHz	2.5V	±20ppm
530BB100M000DG	Silicon Labs	Si530	100MHz	3.3V	±20ppm
530FC156M250DG	Silicon Labs	Si530	156.25MHz	2.5V	±7ppm
510ABA125M000BAG	Silicon Labs	Si510	125MHz	3.3V	±25ppm
511BBA74M2500BAG	Silicon Labs	Si511	74.25MHz	3.3V	±25ppm
510BBA156M250BAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
511ABA156M250BAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
510FBA200M000BAG	Silicon Labs	Si510	200MHz	2.5V	±25ppm
510ABA200M000BAG	Silicon Labs	Si510	200MHz	3.3V	±25ppm
530FA156M250DG	Silicon Labs	Si530	156.25MHz	2.5V	±50ppm
531BC000110DG	Silicon Labs	Si531	148.35165MHz	3.3V	±7ppm
535FB125M000DG	Silicon Labs	Si535	125MHz	2.5V	±20ppm
SI50122-A4-GM	Silicon Labs	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm
511ABA156M250AAGR	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
530FC125M000DG	Silicon Labs	Si530	125MHz	2.5V	±7ppm
531BC200M000DG	Silicon Labs	Si531	200MHz	3.3V	±7ppm
531BC250M000DG	Silicon Labs	Si531	250MHz	3.3V	±7ppm
530AC622M080DG	Silicon Labs	Si530	622.08MHz	3.3V	±7ppm
511FBA100M000BAG	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511BBA106M250BAG	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
510BBA156M250AAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
510ABA156M250AAG	Silicon Labs	Si510	156.25MHz	3.3V	±25ppm
531BC125M000DG	Silicon Labs	Si531	125MHz	3.3V	±7ppm
530AC125M000DG	Silicon Labs	Si530	125MHz	3.3V	±7ppm
531FB106M250DG	Silicon Labs	Si531	106.25MHz	2.5V	±20ppm
531AC156M250DG	Silicon Labs	Si531	156.25MHz	3.3V	±7ppm
531AC200M000DG	Silicon Labs	Si531	200MHz	3.3V	±7ppm
531BC148M500DG	Silicon Labs	Si531	148.5MHz	3.3V	±7ppm
530AC200M000DG	Silicon Labs	Si530	200MHz	3.3V	±7ppm
530BC200M000DG	Silicon Labs	Si530	200MHz	3.3V	±7ppm
531BC156M250DG	Silicon Labs	Si531	156.25MHz	3.3V	±7ppm
530FC200M000DG	Silicon Labs	Si530	200MHz	2.5V	±7ppm
536BB156M250DG	Silicon Labs	Si536	156.25MHz	3.3V	±20ppm
536FB156M250DG	Silicon Labs	Si536	156.25MHz	2.5V	±20ppm
536AB156M250DG	Silicon Labs	Si536	156.25MHz	3.3V	±20ppm
510FBA125M000BAG	Silicon Labs	Si510	125MHz	2.5V	±25ppm
511BBA000149BAG	Silicon Labs	Si511	74.175824MHz	3.3V	±25ppm
510FBA100M000BAG	Silicon Labs	Si510	100MHz	2.5V	±25ppm
511FBA106M250BAG	Silicon晶振	Si511	106.25MHz	2.5V	±25ppm
510BBA106M250BAG	Silicon Labs	Si510	106.25MHz	3.3V	±25ppm
511BBA125M000AAG	Silicon Labs	Si511	125MHz	3.3V	±25ppm
510BBA100M000AAG	Silicon Labs	Si510	100MHz	3.3V	±25ppm
510BBA125M000AAG	Silicon Labs	Si510	125MHz	3.3V	±25ppm
511FBA100M000AAG	Silicon Labs	Si511	100MHz	2.5V	±25ppm
511BBA106M250AAG	Silicon Labs	Si511	106.25MHz	3.3V	±25ppm
511FBA148M500BAG	Silicon Labs	Si511	148.5MHz	2.5V	±25ppm
510FBA148M500BAG	Silicon Labs	Si510	148.5MHz	2.5V	±25ppm
511BBA156M250BAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
511FBA156M250BAG	Silicon Labs	Si511	156.25MHz	2.5V	±25ppm
510BBA148M500BAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
511BBA156M250AAG	Silicon Labs	Si511	156.25MHz	3.3V	±25ppm
510FBA156M250AAG	Silicon Labs	Si510	156.25MHz	2.5V	±25ppm
511ABA155M520AAG	Silicon Labs	Si511	155.52MHz	3.3V	±25ppm
510FBA148M500AAG	Silicon Labs	Si510	148.5MHz	2.5V	±25ppm
511BBA155M520AAG	Silicon Labs	Si511	155.52MHz	3.3V	±25ppm
510BBA148M500AAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
510ABA148M500AAG	Silicon Labs	Si510	148.5MHz	3.3V	±25ppm
510DBA100M000AAG	Silicon Labs	Si510	100MHz	3.3V	±25ppm
531AC125M000DG	Silicon Labs	Si531	125MHz	3.3V	±7ppm

511FCA100M000BAG Silicon差分振荡器 6G交换机晶振 Si511有源晶振

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