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康华尔电子多年来在竞争激烈的市场中,以技术占领市场,以质量赢得客户,是国内口碑极高的晶振供应商.并且凭借自身的努力代理台湾进口晶振多个品牌,TXC晶振,鸿星晶振,加高晶振,亚陶晶振等.康华尔电子所提供的台产晶振,均符合德国ROHS环保指令,具有高质量,高可靠使用特性,咨询选购热线0755-27838351.
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有源晶振是一款自身带有电源电压功能的石英晶体振荡器,并且有多种电压供选择,比如有1.8V,2.5V,3.3V,3.8V,5V等高速自动安装和高温回流焊设计,Optionable待机输出三态输出功能,电源电压范围：1.8V~5 V,高稳定性,低抖动,低功耗,主要应用领域:无线通讯,高端智能手机,平板笔记本WLAN,蓝牙,数码相机,DSL和其他IT产品的晶振应用,三态功能,PC和LCDM等高端数码领域,符合RoHS/无铅.
频率：100MHZ
尺寸：7.0×5.0mm
SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ，尺寸7.0×5.0mm，频率为100MHZ，欧美有源振荡器，有源压控晶振，VCXO压控晶体振荡器，7050mm压控晶振，贴片压控晶振，100MHZ压控晶振，六脚压控晶振，低抖动压控晶振，低损耗压控晶振，低电压压控晶振，低相位压控晶振，低相噪压控晶振，光学模块压控晶振，数据恢复应用压控晶振，通信设备压控晶振，具有低抖动低电压的特点。产品很适合用于SONET/SDH，xxDSL，110 GbE LAN/WAN，低抖动时钟生成，光学模块，时钟和数据恢复等应用。
Si550 VCXO利用Skyworks Solutions的先进DSPLL®电路提供高频率的低抖动时钟。Si550支持任何频率从10到945MHz，并选择频率到1417MHz。不像传统的VCXO晶振，其中每个输出需要不同的晶体频率，Si550使用一个固定晶体来提供宽范围的输出频率。这种基于IC的方法允许晶体谐振器提供卓越的频率稳定性和可靠性。SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ.
SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ，尺寸7.0×5.0mm，频率为100MHZ，欧美有源振荡器，有源压控晶振，VCXO压控晶体振荡器，7050mm压控晶振，贴片压控晶振，100MHZ压控晶振，六脚压控晶振，低抖动压控晶振，低损耗压控晶振，低电压压控晶振，低相位压控晶振，低相噪压控晶振，光学模块压控晶振，数据恢复应用压控晶振，通信设备压控晶振，具有低抖动低电压的特点。产品很适合用于SONET/SDH，xxDSL，110 GbE LAN/WAN，低抖动时钟生成，光学模块，时钟和数据恢复等应用。
Si550 VCXO利用Skyworks Solutions的先进DSPLL®电路提供高频率的低抖动时钟。Si550支持任何频率从10到945MHz，并选择频率到1417MHz。不像传统的VCXO晶振，其中每个输出需要不同的晶体频率，Si550使用一个固定晶体来提供宽范围的输出频率。这种基于IC的方法允许晶体谐振器提供卓越的频率稳定性和可靠性。SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ.
SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
| Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
|
120 108 99 90 |
130 117 108 98 |
mA | |||||||||||||||
| tristate mode | 60 | 75 | mA | ||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x V DD | V | ||||||||||||||||||
| VIL | 0.5 | V | |||||||||||||||||||
| Operating Temperature Range | TA | –40 | 85 | °C | |||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
| Control Voltage Tuning Slope1,2,3 | KV | 10 to 90% of V DD |
|
33 45 90 135 180 356 |
|
ppm/V | |||||||||||||||
| Control Voltage Linearity4 | LVC | BSL | –5 | ±1 | +5 | % | |||||||||||||||
| Incremental | –10 | ±5 | +10 | % | |||||||||||||||||
| Modulation Bandwidth | BW | 9.3 | 10.0 | 10.7 | kHz | ||||||||||||||||
| VC Input Impedance | Z VC | 500 | kΩ | ||||||||||||||||||
| Nominal Control Voltage | VCNOM | @ fO | V DD/2 | V | |||||||||||||||||
| Control Voltage Tuning Range | VC | 0 | V DD | V | |||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
| Nominal Frequency1,2,3 | fO | LVDS/CML/LVPECL |
|
100 |
|
MHz | |||||||||||||||
| CMOS | 10 | 160 | MHz | ||||||||||||||||||
| Temperature Stability1,4 | TA = –40 to +85 ºC |
–20 –50 –100 |
|
+20 +50 +100 |
ppm | ||||||||||||||||
| Absolute Pull Range1,4 | APR | ±12 | ±375 | ppm | |||||||||||||||||
| Aging | Frequency drift over first year. | ±3 | ppm | ||||||||||||||||||
| Frequency drift over 15 year life. | ±10 | ||||||||||||||||||||
| Power up Time5 | tOSC | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units | |||||||||||||||
| LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | V DD – 1.25 | V | ||||||||||||||||
| VOD | swing (diff) | 1.1 | 1.9 | VPP | |||||||||||||||||
| VSE | swing (single-ended) | 0.55 | 0.95 | VPP | |||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | |||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | ||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | — | V DD – 1.30 | — | V | |||||||||||||||
| 1.8 V option mid-level | — | V DD – 0.36 | — | V | |||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | ||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | |||||||||||||||||
| CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | — | V DD | V | |||||||||||||||
| VOL | I OL= 32 mA | — | — | 0.4 | V | ||||||||||||||||
| Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | — | — | 350 | ps | |||||||||||||||
| CMOS with CL= 15 pF | — | 1 | — | ns | |||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: V DD – 1.3 V (diff) LVDS: 1.25 V (diff) CMOS: V DD/2 |
45 | — | 55 | % | |||||||||||||||
SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ 尺寸图 
SiliconCrystal,550AE100M000DGR,Si550压控振荡器,7050mm,100MHZ
有源晶振产品特点：
可用于的任何频率
10至945MHz，然后选择频率至1.4GHz
第三代DSPLL®卓越的抖动性能（0.5ps）
温度稳定性是SAW振荡器
出色的PSRR性能
内部固定晶体频率
确保高可靠性和低成本
变老
可用的CMOS、LVPECL、LVDS和CML输出
3.3、2.5和1.8 V电源选项
行业标准5x7mm包装和引脚
无铅/符合RoHS
| Manufacturer Part Number原厂代码 | 欧美晶振品牌 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
| 531BB125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±20ppm |
| 531FB200M000DG | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±20ppm |
| 531FC250M000DG | Silicon振荡器 | Si531 | 250MHz | 2.5V | ±7ppm |
| 531FB125M000DG | Silicon振荡器 | Si531 | 125MHz | 2.5V | ±20ppm |
| 531BC000110DG | Silicon振荡器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531BC200M000DG | Silicon振荡器 | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC250M000DG | Silicon振荡器 | Si531 | 250MHz | 3.3V | ±7ppm |
| 531BC125M000DG | Silicon振荡器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531FB106M250DG | Silicon振荡器 | Si531 | 106.25MHz | 2.5V | ±20ppm |
| 531AC156M250DG | Silicon振荡器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC200M000DG | Silicon振荡器 | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC148M500DG | Silicon振荡器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 531BC156M250DG | Silicon振荡器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC125M000DG | Silicon振荡器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531FC125M000DG | Silicon振荡器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 531FC156M250DG | Silicon振荡器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531FC148M500DG | Silicon振荡器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531AC155M520DG | Silicon振荡器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531BC155M520DG | Silicon振荡器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531FC200M000DG | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531AC622M080DG | Silicon振荡器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531AC312M500DG | Silicon振荡器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531AC106M250DG | Silicon振荡器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC106M250DG | Silicon振荡器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531BC187M500DG | Silicon振荡器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531EC155M520DG | Silicon振荡器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531AC187M500DG | Silicon振荡器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531EC187M500DG | Silicon振荡器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531EC000110DG | Silicon振荡器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC148M500DG | Silicon振荡器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531FC155M520DG | Silicon振荡器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531EC156M250DG | Silicon振荡器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531AC311M040DG | Silicon振荡器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531BC311M040DG | Silicon振荡器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531EC311M040DG | Silicon振荡器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 531EC622M080DG | Silicon振荡器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC622M080DG | Silicon振荡器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC311M040DG | Silicon振荡器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 531BC622M080DG | Silicon振荡器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531FC312M500DG | Silicon振荡器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 531EC312M500DG | Silicon振荡器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 531AC250M000DG | Silicon振荡器 | Si531 | 250MHz | 3.3V | ±7ppm |
| 531EC250M000DG | Silicon振荡器 | Si531 | 250MHz | 2.5V | ±7ppm |
| 531BC312M500DG | Silicon振荡器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531AA156M250DG | Silicon振荡器 | Si531 | 156.25MHz | 3.3V | ±50ppm |
| 531BC106M250DG | Silicon振荡器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC125M000DG | Silicon振荡器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 531FC106M250DG | Silicon振荡器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC187M500DG | Silicon振荡器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531FC000110DG | Silicon振荡器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC200M000DG | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531AC000110DG | Silicon振荡器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DG | Silicon振荡器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 550CD74M2500DGR | Silicon振荡器 | Si550 | 74.25MHz | 3.3V | ±50ppm |
| 531AC125M000DGR | Silicon振荡器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531BC125M000DGR | Silicon振荡器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531EC125M000DGR | Silicon振荡器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 531FC125M000DGR | Silicon振荡器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 531AC106M250DGR | Silicon振荡器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531BC106M250DGR | Silicon振荡器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC106M250DGR | Silicon振荡器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC106M250DGR | Silicon振荡器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC25M0000DGR | Silicon振荡器 | Si531 | 25MHz | 2.5V | ±7ppm |
| 531AC155M520DGR | Silicon振荡器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531AC156M250DGR | Silicon振荡器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531BC155M520DGR | Silicon振荡器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531BC156M250DGR | Silicon振荡器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531EC155M520DGR | Silicon振荡器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531EC156M250DGR | Silicon振荡器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531FC155M520DGR | Silicon振荡器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531FC156M250DGR | Silicon振荡器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531AC187M500DGR | Silicon振荡器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531BC187M500DGR | Silicon振荡器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531EC187M500DGR | Silicon振荡器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531FC187M500DGR | Silicon振荡器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531AC000110DGR | Silicon振荡器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DGR | Silicon振荡器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 531AC200M000DGR | Silicon Crystal | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC000110DGR | Silicon振荡器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531BC148M500DGR | Silicon振荡器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 531BC200M000DGR | Silicon振荡器 | Si531 | 200MHz | 3.3V | ±7ppm |
| 531EC000110DGR | Silicon振荡器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC148M500DGR | Silicon振荡器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531EC200M000DGR | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531FC000110DGR | Silicon振荡器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531FC148M500DGR | Silicon振荡器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531FC200M000DGR | Silicon振荡器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 550AE100M000DGR | Silicon振荡器 | Si550 | 100MHz | 3.3V | ±20ppm |
| 550AE100M000DG | Silicon振荡器 | Si550 | 100MHz | 3.3V | ±20ppm |
| 531AC312M500DGR | Silicon振荡器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531BC312M500DGR | Silicon振荡器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531EC312M500DGR | Silicon振荡器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 531FC312M500DGR | Silicon振荡器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 531AC250M000DGR | Silicon振荡器 | Si531 | 250MHz | 3.3V | ±7ppm |
| 531AC311M040DGR | Silicon振荡器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531AC622M080DGR | Silicon振荡器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531BC250M000DGR | Silicon振荡器 | Si531 | 250MHz | 3.3V | ±7ppm |
Si595发射器晶振,思佳讯压控差分振荡器,595AE192M000DG，尺寸7.0x5.0mm，频率212MHZ，输出逻辑LVDS，电压2.5V，频率稳定性20ppm，欧美压控振荡器，Skyworks有源晶振，思佳讯差分晶振，7050mm差分晶振，差分晶振LVDS，压控差分晶振，VCXO压控晶体振荡器，差分晶体振荡器，石英差分振荡器，贴片差分晶振，差分有源晶振，差分贴片振荡器，有源压控晶振，六脚差分晶振，高质量差分晶振，高频差分振荡器，高性能差分晶振，低抖动差分晶振，低损耗差分晶振，低电压差分晶振，低耗能差分晶振，低功耗差分晶振，低损耗差分晶振，低相位差分晶振，低相噪差分晶振，发射器差分晶振，网络设备差分晶振，智能家电差分晶振，无线模块差分晶振，转换机差分晶振，便携式设备差分晶振，仪器设备差分晶振，具有良好的耐压性能。
Si595 VCXO压控晶体振荡器利用Skyworks Solutions的先进DSPLL®电路在高频下提供低抖动时钟。Si595具有从10到810MHz的任何速率输出频率。与传统的VCXO不同，其中每个输出频率需要不同的晶体，Si595使用一个固定晶体来提供宽范围的输出频率。这种基于IC的方法允许晶体谐振器提供卓越的性能频率稳定性和可靠性。Si595发射器晶振,思佳讯压控差分振荡器,595AE192M000DG.
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